Graphene transistors promise 100GHz speeds (page 2)
Researchers are running into the physical limits of speed and scaling in silicon transistor technology, forcing them to look elsewhere for next-generation devices. The leading candidate to replace silicon being pursued by, well, pretty much everyone, is graphene. Graphene, single sheets of graphitic carbon, is exciting because it is a single atom thick and has remarkably high electron mobilities (100 times greater than silicon), making it ideally suited to atomic-scale, high-speed operation. Also, graphene's electrical properties can be controlled, switching it among conducting, semiconducting and electrically insulating forms. That means graphene-only (or, more likely, graphene-mostly) devices are, in principle, possible. In this week's Science, researchers from IBM demonstrate graphene-based field effect transistors (FETs) that may operate at much higher speeds (100GHz) than Si FETs. Graphene layers were thermally grown on two-inch SiC wafers and the FETs were formed using standard Si fabrication techniqu
Graphene transistors promise 100GHz speeds
Researchers are running into the physical limits of speed and scaling in silicon transistor technology, forcing them to look elsewhere for next-generation devices. The leading candidate to replace ...
Thu 4 Feb 10 from Ars Technica
Great Galloping Graphene! IBM's New Transistor Works at Record Speed
100 gigahertz of processing power--not bad for a single sheet of atoms. In ...
Mon 8 Feb 10 from Discover Magazine
IBM Researchers Demonstrate Graphene Transistor with the Highest Cut-Off Frequency
In a just-published paper in the magazine Science, IBM (NYSE: IBM) researchers demonstrated a radio-frequency graphene transistor with the highest cut-off frequency achieved so far for any gra...
Fri 5 Feb 10 from AZoNano
World's Fastest Graphene Transistor Demostrated by IBM, Tue 9 Feb 10 from R&D Mag
Key Milestone Reached on Road to Graphene-Based Electronic Devices
Researchers in the Electro-Optics Center (EOC) Materials Division at Penn State have produced 100mm diameter graphene wafers, a key milestone in the development of graphene for next generation ...
Fri 29 Jan 10 from Newswise
Graphene-based electronic devices closer to reality, Tue 2 Feb 10 from R&D Mag
Top 100 Stories of 2009: #7: The Graphene Revolution
Flexible, see-through, one-atom-thick sheets of carbon could be a key component for futuristic solar cells, batteries, and roll-up LCD screens--and perhaps even microchips.
Tue 26 Jan 10 from Discover Magazine
Scientists demonstrate world's fastest graphene transistor; holds promise for improving performance of transistors
IBM researchers have demonstrated a radio-frequency graphene transistor with the highest cut-off frequency achieved so far for any graphene device -- 100 billion cycles/second (100 GigaHertz). ...
Sat 6 Feb 10 from ScienceDaily
IBM's latest graphene transistor breaks 100 GHz barrier
A team at IBM working for the Carbon Electronics for RF Applications program funded by DARPA previously achieved 26GHz. But this breakthrough--the world's fastest cycle speed for graphene--was ...
Fri 5 Feb 10 from R&D Mag
Made in IBM Labs: IBM Scientists Demonstrate World's Fastest Graphene Transistor
YORKTOWN HEIGHTS, N.Y., Feb.
Fri 5 Feb 10 from RedOrbit
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